Kniha CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 Alexander A. DemkovBill TaylorH. Rusty HarrisJeffery W. Butterbaugh

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155

Jazyk: Angličtina
Vazba: Pevná
Dostupnost: Skladem u dodavatele
Odesíláme za 9-15 dnů
2 808
To address the increasing demands of device scaling, new materials are being introduced into convent...

Informace o knize

Jazyk
Angličtina
Vazba
Kniha - Pevná
Vydáno
2009
Stránek
194
EAN
9781605111285
ISBN
1605111287
Enbook ID
02060485
Hmotnost
430
Rozměry
160 x 236 x 14

Kompletní popis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

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