Defects Spectroscopy in Silicon Diodes

Name: Defects Spectroscopy in Silicon Diodes
Brand: Edizioni Accademiche Italiane
SKU: 9783639773040
Price: 1376 CZK
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Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage

Autor: Barbero Nicolo

Jazyk:

Vazba: Brožovaná

Vydavatel: Edizioni Accademiche Italiane

Dostupnost: Skladem u dodavatele

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This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the plati...

Informace o knize

Autor

Barbero Nicolo

Jazyk

Angličtina

Vazba

Kniha - Brožovaná

Vydáno

2015

Stránek

244

EAN

9783639773040

ISBN

3639773047

Enbook ID

02863900

Vydavatel

Edizioni Accademiche Italiane

Hmotnost

363

Rozměry

152 x 229 x 14

Kompletní popis

This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the "IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators" (2012-2015).

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Defects Spectroscopy in Silicon Diodes

Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage

Informace o knize

Kompletní popis

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