Kniha Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells MUHAMMED SHIBIB

Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Jazyk: Angličtina
Vazba: Brožovaná
Dostupnost: Skladem u dodavatele
Odesíláme za 9-15 dnů
1 426
Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the...

Informace o knize

Jazyk
Angličtina
Vazba
Kniha - Brožovaná
Vydáno
2019
Stránek
206
EAN
9780530008127
ISBN
0530008122
Enbook ID
22569085
Hmotnost
490
Rozměry
216 x 279 x 11

Kompletní popis

Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The

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