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Kniha Dielectric and Work Function Engineered Doping-Less Tunnel FET N. B. Balamurugan

Dielectric and Work Function Engineered Doping-Less Tunnel FET

Autor: N. B. Balamurugan
Jazyk: Angličtina
Vazba: Brožovaná
Vydavatel: LAP LAMBERT Academic Publishing
Dostupnost: Skladem u dodavatele
Odesíláme za 5-8 dnů
1 415 Kč
The perpetual downscaling of devices has achieved higher packaging density and faster switching perf...

Informace o knize

Autor
N. B. Balamurugan
Jazyk
Angličtina
Vazba
Kniha - Brožovaná
Vydáno
2020
Stránek
200
EAN
9786202672030
ISBN
620267203X
Enbook ID
36932783
Vydavatel
LAP LAMBERT Academic Publishing
Hmotnost
316
Rozměry
150 x 220 x 12

Kompletní popis

The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.

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