Gas Source Molecular Beam Epitaxy

Name: Gas Source Molecular Beam Epitaxy
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783642781292
Price: 2286 CZK
Availability: InStock

Growth and Properties of Phosphorus Containing III-V Heterostructures

Autor: Henryk Temkin

Jazyk:

Vazba: Brožovaná

Vydavatel: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Dostupnost: Skladem u dodavatele

Odesíláme za 5-8 dnů

2 286 Kč

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metal...

Informace o knize

Autor

Henryk Temkin

Jazyk

Angličtina

Vazba

Kniha - Brožovaná

Vydáno

2011

Stránek

428

EAN

9783642781292

ISBN

9783642781292

Enbook ID

06621930

Vydavatel

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Hmotnost

668

Rozměry

155 x 235 x 24

Kompletní popis

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

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Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

Informace o knize

Kompletní popis

Mohlo by vás zajímat

Zákaznicí kteří koupili tuto knihu koupili také