Kniha High Dielectric Constant Materials Howard Huff

High Dielectric Constant Materials

VLSI MOSFET Applications

Jazyk: Angličtina
Vazba: Pevná
Dostupnost: Skladem u dodavatele v malém množství
Odesíláme za 13-18 dnů
7 591
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving Int...

Informace o knize

Jazyk
Angličtina
Vazba
Kniha - Pevná
Vydáno
2004
Stránek
710
EAN
9783540210818
ISBN
3540210814
Enbook ID
05273715
Hmotnost
2650
Rozměry
155 x 235 x 45

Kompletní popis

Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

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