Integrated Electronics on Aluminum Nitride

Name: Integrated Electronics on Aluminum Nitride
Brand: Springer, Berlin
SKU: 9783031171987
Price: 4566 CZK
Availability: InStock

Materials and Devices

Autor: Reet Chaudhuri

Jazyk:

Vazba: Pevná

Vydavatel: Springer, Berlin

Dostupnost: Skladem u dodavatele

Odesíláme za 10-13 dnů

4 566 Kč

This thesis outlines the principles, device physics, and technological applications of electronics b...

Informace o knize

Autor

Reet Chaudhuri

Jazyk

Angličtina

Vazba

Kniha - Pevná

Vydáno

2022

Stránek

255

EAN

9783031171987

Enbook ID

41407874

Vydavatel

Springer, Berlin

Hmotnost

557

Rozměry

155 x 235 x 21

Kompletní popis

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

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Integrated Electronics on Aluminum Nitride

Materials and Devices

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