Interconnection development for InP-HBT terahertz circuits

Name: Interconnection development for InP-HBT terahertz circuits
Brand: Cuvillier
SKU: 9783736972049
Price: 1061 CZK
Availability: InStock

Autor: Dimitri Stoppel

Jazyk:

Vazba: Brožovaná

Vydavatel: Cuvillier

Dostupnost: Skladem u dodavatele

Odesíláme za 8-11 dnů

1 061 Kč

For frequencies above 300 GHz applications are still in the research state since commercially availa...

Informace o knize

Autor

Dimitri Stoppel

Jazyk

Angličtina

Vazba

Kniha - Brožovaná

Vydáno

2020

Stránek

156

EAN

9783736972049

ISBN

3736972040

Enbook ID

32842037

Vydavatel

Cuvillier

Hmotnost

195

Rozměry

148 x 210 x 9

Kompletní popis

For frequencies above 300 GHz applications are still in the research state since commercially available systems are missing. This dissertation shows three key aspects in process development that are now part of a standard indium phosphide (InP) transferred-substrate process, paving the way for future terahertz projects and applications.
The InP transferred-substrate process at Ferdinand-Braun-Institut (FBH) has proven to be a promising candidate for the respective semiconductor components. This particular process utilizes the wafer bonding technique, which allows transferring the active monolithic microwave integrated circuits (MMICs) onto a host substrate. Such host substrate can be either a passive substrate that is equipped with through-silicon vias (TSVs) or a BiCMOS wafer. Hetero-integrated approaches offer ideal conditions to fulfill the requirements of applications regarding complexity (BiCMOS) and large bandwidth (InP).
Within this thesis, three topics are described in greater detail: benzocyclobutene (BCB) dry etch process development, nickel-chrome (NiCr) thin film resistor (TFRs) development and through-silicon vias implementation. Eventually, the newly developed plasma etch process has been successfully implemented into standard InP processing, with a fivefold increase in etch rate at maintained bias and anisotropy. Also, a method to suppress redeposition formation was shown. Successful circuit measurements with implemented NiCr resistors demonstrated the last step of TFR integration. A new approach with bottom contacted TFRs was successfully integrated. A laser-enabled TSV process was developed to serve as an effective and reliable way to circumvent parasitic parallel plate modes that occur at high operating frequency circuits.

Mohlo by vás zajímat

Zákaznicí kteří koupili tuto knihu koupili také

Nejčastěji hledané

Categories

Authors

Publishers

Produkty

Produkty

Nejčastěji hledané

Categories

Authors

Publishers

Produkty

Produkty

Interconnection development for InP-HBT terahertz circuits

Informace o knize

Kompletní popis

Mohlo by vás zajímat

Zákaznicí kteří koupili tuto knihu koupili také