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Applying HgCdTe infrared material as a key example, this book delves into the theoretical knowledge and experimental techniques necessary to achieve high quality semiconductor lattice-mismatched heteroepitaxy for applications in high performance electronic and optoelectronic devices. The concepts and techniques introduced in this book can be extended to other semiconductor material systems and devices, and thus, it serves as an essential reference book for engineers, researchers and academics working in the general area of semiconductor epitaxy and related device applications. By guiding the development of superior heteroepitaxial materials, it supports the creation of next-generation electronic and optoelectronic devices with expanded performance and functionality.
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