Modelling of basic parameters for non-conventional MOSFETs

Name: Modelling of basic parameters for non-conventional MOSFETs
Brand: LAP LAMBERT Academic Publishing
SKU: 9786206739814
Price: 866 CZK
Availability: InStock

Autor: Swapnadip De

Jazyk:

Vazba: Brožovaná

Vydavatel: LAP LAMBERT Academic Publishing

Dostupnost: Skladem u dodavatele

Odesíláme za 8-11 dnů

866 Kč

In this book, the channel engineering and the gate engineering techniques are combined to form novel...

Informace o knize

Autor

Swapnadip De

Jazyk

Angličtina

Vazba

Kniha - Brožovaná

Vydáno

2023

Stránek

EAN

9786206739814

ISBN

6206739813

Enbook ID

43849778

Vydavatel

LAP LAMBERT Academic Publishing

Hmotnost

113

Rozměry

150 x 220 x 4

Kompletní popis

In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.

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Modelling of basic parameters for non-conventional MOSFETs

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