Monte Carlo Device Simulation

Name: Monte Carlo Device Simulation
Brand: Springer
SKU: 9780792391722
Price: 3937 CZK
Availability: InStock

Full Band and Beyond

Autor: Karl Hess

Jazyk:

Vazba: Pevná

Vydavatel: Springer

Dostupnost: Skladem u dodavatele v malém množství

Odesíláme za 13-18 dnů

3 937 Kč

Monte Carlo simulation is now a well established method for studying semiconductor devices and is pa...

Informace o knize

Autor

Karl Hess

Jazyk

Angličtina

Vazba

Kniha - Pevná

Vydáno

1991

Stránek

310

EAN

9780792391722

ISBN

0792391721

Enbook ID

01398082

Vydavatel

Springer

Hmotnost

1390

Rozměry

155 x 235 x 22

Kompletní popis

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

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Monte Carlo Device Simulation

Full Band and Beyond

Informace o knize

Kompletní popis

Mohlo by vás zajímat

Zákaznicí kteří koupili tuto knihu koupili také