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Kniha Nanoscale Transistors Mark Lundstrom

Nanoscale Transistors

Device Physics, Modeling and Simulation

Autor: Mark Lundstrom
Jazyk: Angličtina
Vazba: Pevná
Vydavatel: Springer-Verlag New York Inc.
Dostupnost: Skladem u dodavatele v malém množství
Odesíláme za 13-18 dnů
2 568 Kč
The continuous scaling of transistors in the last half of century has been the driving force for ele...

Informace o knize

Autor
Mark Lundstrom
Jazyk
Angličtina
Vazba
Kniha - Pevná
Vydáno
2005
Stránek
218
EAN
9780387280028
ISBN
0387280022
Enbook ID
01381440
Vydavatel
Springer-Verlag New York Inc.
Hmotnost
1100
Rozměry
155 x 235 x 18

Kompletní popis

The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much more important. To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.The book provides a description of the recent development of theory, modeling, and simulation of nanotransistors for engineers and scientists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors.

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